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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PJD35N06A-AU | 60V N-Channel Enhancement Mode MOSFET Features RDS(ON), VGS@10V,ID@20A | PANJIT 強茂 |   | |
PJD35N06A-AU | MOSFET | PANJIT 強茂 | | |
60V N-Channel Enhancement Mode MOSFET Features RDS(ON), VGS@10V,ID@20A | PANJIT 強茂 | | ||
60V N-Channel Power Mosfet Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test | UMW 友台半导体 | | ||
60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit | EVVOSEMI 翊欧 | | ||
60V N-Channel Trench MOSFET 文件：812.36 Kbytes Page：8 Pages | SEMIHOW | | ||
N-Channel MOSFET uses advanced trench technology 文件：973.99 Kbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.44 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT/强茂 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
PANJIT |
23+ |
TO252 |
282200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
PANJIT |
25+ |
TO-252 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PANJIT |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-252AA |
986966 |
国产 |
PJD35N06A-AU规格书下载地址
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DdatasheetPDF页码索引
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