| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHX6N60E | PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX6N60E is supplied | PHILIPS 飞利浦 | ||
PHX6N60E | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
PHX6N60E | PowerMOS transistors Avalanche energy rated | ETC 知名厂家 | ETC | |
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied | PHILIPS 飞利浦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TO-220F |
47186 |
郑重承诺只做原装进口现货 |
|||
PHI |
2023+ |
TO-220F |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
恩XP |
23+ |
TO-220F |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
PHI |
25+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
|||
PHI |
04+P |
TO-220 |
852 |
||||
PHI |
25+23+ |
TO-220 |
28006 |
绝对原装正品全新进口深圳现货 |
|||
PH |
24+ |
SOT186ATO-220F |
8866 |
||||
恩XP |
23+ |
TO-220F |
8000 |
只做原装现货 |
|||
恩XP |
23+ |
TO-220F |
7000 |
||||
PHO |
2447 |
CONN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
PHX6N60E规格书下载地址
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DdatasheetPDF页码索引
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