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型号 功能描述 生产厂家 企业 LOGO 操作
PHX6N60E

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX6N60E is supplied

PHILIPS

飞利浦

PHX6N60E

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PHX6N60E

PowerMOS transistors Avalanche energy rated

ETC

知名厂家

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

PHILIPS

飞利浦

更新时间:2026-5-20 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
24+
TO-220F
47186
郑重承诺只做原装进口现货
PHI
2023+
TO-220F
8800
正品渠道现货 终端可提供BOM表配单。
恩XP
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
PHI
25+
TO-220
30000
全新原装现货,价格优势
PHI
04+P
TO-220
852
PHI
25+23+
TO-220
28006
绝对原装正品全新进口深圳现货
PH
24+
SOT186ATO-220F
8866
恩XP
23+
TO-220F
8000
只做原装现货
恩XP
23+
TO-220F
7000
PHO
2447
CONN
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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