| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHX6N60E | PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX6N60E is supplied | PHILIPS 飞利浦 | ||
PHX6N60E | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
PHX6N60E | PowerMOS transistors Avalanche energy rated | ETC 知名厂家 | ETC | |
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied | PHILIPS 飞利浦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
恩XP |
2016+ |
TO220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
PHI |
22+ |
TO220F |
12245 |
现货,原厂原装假一罚十! |
|||
PHI |
24+ |
TO220F |
39197 |
郑重承诺只做原装进口现货 |
|||
恩XP |
23+ |
TO220F |
132000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PHI |
25+ |
TO-220 |
860000 |
明嘉莱只做原装正品现货 |
|||
PHI |
2023+ |
TO-220 |
7868 |
十五年行业诚信经营,专注全新正品 |
|||
PHI |
24+ |
TO220F |
36500 |
原装现货/放心购买 |
|||
原装 |
1923+ |
TO220F |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
PHI |
25+ |
TO-220F |
27500 |
原装正品,价格最低! |
PHX6N60E规格书下载地址
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DdatasheetPDF页码索引
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