型号 功能描述 生产厂家 企业 LOGO 操作
MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

Motorola

摩托罗拉

MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

Motorola

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

Motorola

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

Motorola

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名厂家

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名厂家

High Energy PowerFET

ONSEMI

安森美半导体

High Energy PowerFET

文件:214.29 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

ISC

无锡固电

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

N-CHANNEL POWER MOSFET

文件:460.3 Kbytes Page:6 Pages

ZSELEC

淄博圣诺

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

N-Channel 600V (D-S) Power MOSFET

文件:1.0803 Mbytes Page:9 Pages

VBSEMI

微碧半导体

MTB6N60产品属性

  • 类型

    描述

  • 型号

    MTB6N60

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 6.0 AMPERES 600 VOLTS

更新时间:2025-12-25 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
23+
263
50000
全新原装正品现货,支持订货
ON/安森美
23+
TO-263
89630
当天发货全新原装现货
MOTOROLA
24+
TO-263
16800
绝对原装进口现货 假一赔十 价格优势!?
MOTOROLA
22+
SOT-263
20000
公司只做原装 品质保障
MOTOROLA/摩托罗拉
23+
263
15045
原厂授权一级代理,专业海外优势订货,价格优势、品种
MOT
23+24
SOT263
17154
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
MOTOROLA
08+
2000
普通
onsemi(安森美)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
ON
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
MOT
25+
SOT263
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可

MTB6N60数据表相关新闻