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型号 功能描述 生产厂家 企业 LOGO 操作
MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

MTB6N60

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

MOTOROLA

摩托罗拉

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名厂家

High Energy PowerFET

文件:214.29 Kbytes Page:7 Pages

ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 600 VOLTS

ETC

知名厂家

High Energy PowerFET

ONSEMI

安森美半导体

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand

MOTOROLA

摩托罗拉

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied

PHILIPS

飞利浦

MTB6N60产品属性

  • 类型

    描述

  • 型号

    MTB6N60

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    TMOS POWER FET 6.0 AMPERES 600 VOLTS

更新时间:2026-8-1 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
MOT
9920+
TO-262
6002
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
25+23+
TO263
72872
绝对原装正品现货,全新深圳原装进口现货
ON
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
MOTOROLA
22+
TO-263
3000
原装正品,支持实单
ON
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ON/安森美
22+
TO-263
95074
MOTOROLA
22+
SOT-263
20000
公司只做原装 品质保障
MOTOROLA
24+
TO-263
4341
ON/安森美
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货

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