位置:首页 > IC中文资料第814页 > MTB6N60E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTB6N60E | TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | ||
MTB6N60E | TMOS POWER FET 6.0 AMPERES 600 VOLTS | ETC 知名厂家 | ETC | |
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS | ETC 知名厂家 | ETC | ||
High Energy PowerFET | ONSEMI 安森美半导体 | |||
High Energy PowerFET 文件:214.29 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS TMOS E-FET™ High Energy Power FET D2PAK-SL Straight Lead N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. De | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS TMOS E-FET™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N60E is supplied | PHILIPS 飞利浦 |
MTB6N60E产品属性
- 类型
描述
- 型号
MTB6N60E
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
ON Semiconductor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi(安森美) |
25+ |
- |
22360 |
样件支持,可原厂排单订货! |
|||
MOT |
9920+ |
TO-262 |
6002 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
26+ |
TO-263 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
MOT |
25+23+ |
TO263 |
72872 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MOTOROLA |
22+ |
TO-263 |
3000 |
原装正品,支持实单 |
|||
ON |
25+ |
TO-263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
MOTOROLA/摩托罗拉 |
23+ |
263 |
15045 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOT |
23+24 |
SOT263 |
17154 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
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