PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.75A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor Isolated version of PHP2N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

PowerMOS transistor Isolated version of PHP2N40E

1 Amps, 400 Volts N-CHANNEL POWER MOSFET

文件：173.49 Kbytes Page：4 Pages

High surge current capability

文件：643.63 Kbytes Page：2 Pages

1A, 400V N-CHANNEL POWER MOSFET

文件：173.29 Kbytes Page：4 Pages

N-CHANNEL ENHANCEMENT

文件：183.3 Kbytes Page：5 Pages

POWER FIELD EFFECT TRANSISTOR

文件：164.85 Kbytes Page：5 Pages