PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.75A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor Isolated version of PHP2N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

1 Amps, 400 Volts N-CHANNEL POWER MOSFET

文件：173.49 Kbytes Page：4 Pages

1A, 400V N-CHANNEL POWER MOSFET

文件：173.29 Kbytes Page：4 Pages

High surge current capability

文件：643.63 Kbytes Page：2 Pages

N-CHANNEL ENHANCEMENT

文件：183.3 Kbytes Page：5 Pages

POWER FIELD EFFECT TRANSISTOR

文件：164.85 Kbytes Page：5 Pages