1A, 400V N-CHANNEL POWER MOSFET

The UTC 1N40A is an N-channel mode power MOSFET usingUTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the aval • High switching speed \n• 100% avalanche tested;

N-CHANNEL ENHANCEMENT

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N-CHANNEL ENHANCEMENT

文件：183.3 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT

文件：183.3 Kbytes Page：5 Pages

N-CHANNEL ENHANCEMENT

文件：183.3 Kbytes Page：5 Pages

1 Amps, 400 Volts N-CHANNEL POWER MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched

PowerMOS transistor Isolated version of PHP2N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

POWER FIELD EFFECT TRANSISTOR

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