PowerMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformance.IntendedforuseinCompactFluorescentLights

ZenerDiodes

■Features ●Ptot500mW ●Vz2.4V-68V ■Applications ●StabilizingVoltage

ZENERDIODES

FEATURE ♦Lowzenerimpedance ♦Lowregulationfactor ♦Glasspassivatedjunction ♦Hightemperaturesolderingguaranteed:260°C/10S/9.5mmleadlengthat5lbstension

Highstabilityandhighreliability

Features •Lowreverseleakage •Lowzenerimpedance •Maximumpowerdissipationof500mW •Highstabilityandhighreliability •LeadandbodyaccordingwithRoHSstandard

ZENERDIODES

1N52SERIESZENERDIODES 1N5221BThrough1N5272BELECTRICALCHARACTERISTICS (TA=25°C)unlessotherwisenoted.Basedondcmeasurementsatthermalequillibrium;leadlength=3/8”;thermalresistanceofheatsink=30°C/WVFmax=1.1V@IF=200mAforalltypes(TA=25°CVFmax=1.1V@IF=200mA)

GOLDBONDEDGERMANIUMDIODE

FEATURES Lowforwardvoltagedrop—lowpowerconsumption Thirtyyearsofprovenreliability—onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgical^bonded