PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

PowerMOS transistor

ZENER DIODES

1N52 SERIES ZENER DIODES 1N5221B Through 1N5272B ELECTRICAL CHARACTERISTICS (T A =25°C)unless otherwise noted.Based on dc measurements at thermal equillibrium;lead length=3/8”;thermal resistance of heat sink=30°C/W VFmax=1.1V @ I F=200mA for all types(T A = 25°C VFmax=1.1V@ I F=200mA)

High stability and high reliability

Features • Low reverse leakage • Low zener impedance • Maximum power dissipation of 500 mW • High stability and high reliability • Lead and body according with RoHS standard

GOLD BONDED GERMANIUM DIODE

FEATURES Low forward voltagedrop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF) Very low noise level Metallurgical^ bonded

ZENER DIODES

FEATURE ♦ Low zener impedance ♦ Low regulation factor ♦ Glass passivated junction ♦ High temperature soldering guaranteed: 260 °C/10S/9.5mm lead length at 5 lbs tension

Zener Diodes

■ Features ● Ptot 500mW ● Vz 2.4V-68V ■ Applications ● Stabilizing Voltage