丝印代码：1006NAB；100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

100 V, 6 A NPN high power bipolar transistor

100 V, 6 A NPN high power bipolar transistor

丝印代码：1006NAB；100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

100 V, 6 A NPN high power bipolar transistor

封装/外壳：SC-100，SOT-669 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 6A LFPAK56 PWRSO8 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DISTANCE DETECTION SIGNAL PROCESSING FOR 3 V SUPPLY VOLTAGE

文件：451.25 Kbytes Page：16 Pages

SINGLE- AND DUAL-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD

文件：393.2 Kbytes Page：22 Pages

SINGLE-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD

文件：389.78 Kbytes Page：22 Pages

SINGLE-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD

文件：389.78 Kbytes Page：22 Pages

SINGLE- AND DUAL-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD

文件：393.2 Kbytes Page：22 Pages