位置：首页 > IC中文资料第6764页 > PHP37N06
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHP37N06 | TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
PHP37N06 | TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS60V RDSON(MAX.)37mΩ ID20A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=37A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=32mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP37N06LTissup | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
PHP37N06产品属性
- 类型
描述
- 型号
PHP37N06
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
TrenchMOS transistor Logic level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PHI |
22+ |
TO220-3 |
3000 |
原装正品,支持实单 |
|||
PHI |
TO220-3 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
24+ |
3000 |
公司存货 |
|||||
PHI |
1998 |
TO220-3 |
145 |
原装现货海量库存欢迎咨询 |
|||
PHI |
17+ |
TO-220 |
6200 |
||||
N |
22+ |
TO220AB |
25000 |
只做原装进口现货,专注配单 |
|||
PHI |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
PHI |
23+ |
TO220-3 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
N |
22+ |
TO220AB |
6000 |
十年配单,只做原装 |
PHP37N06芯片相关品牌
PHP37N06规格书下载地址
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DdatasheetPDF页码索引
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