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型号 功能描述 生产厂家 企业 LOGO 操作
PHD37N06LT

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

PHILIPS

飞利浦

PHD37N06LT

N-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature

VBSEMI

微碧半导体

PHD37N06LT

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 37A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 32mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PHD37N06LT

TrenchMOS transistor Logic level FET

ETC

知名厂家

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP37N06LT is sup

PHILIPS

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

PHILIPS

飞利浦

PHD37N06LT产品属性

  • 类型

    描述

  • 型号

    PHD37N06LT

  • 功能描述

    MOSFET TAPE13 PWR-MOS

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-14 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
N
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
恩XP
20+
SOT428TO-252
36900
原装优势主营型号-可开原型号增税票
恩XP
2450+
TO252
6885
只做原装正品假一赔十为客户做到零风险!!
PHI
25+23+
TO-252
27518
绝对原装正品全新进口深圳现货
PHI
25+
TO-252
30000
全新原装现货,价格优势
恩XP
22+
TO-252
20000
只做原装
PH
24+
SOT428TO-252
8866
恩XP
原厂封装
9800
原装进口公司现货假一赔百
恩XP
23+
TO2523 DPak (2 Leads + Tab) SC
7000
恩XP
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十

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