N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits  Sim

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PHP36N03LT - N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ·Simple gate drive required due to low gate charge\n·Suitable for logic level gate drive sources;

N-channel TrenchMOS logic level FET

文件：91.74 Kbytes Page：13 Pages

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

文件：91.74 Kbytes Page：13 Pages

N-CHANNEL ENHANCEMENT MODE

文件：204.45 Kbytes Page：5 Pages