位置：首页 > IC中文资料第191页 > PHD36N03LT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHD36N03LT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 44A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | |
PHD36N03LT | N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | |
PHD36N03LT | N-channel TrenchMOS logic level FET 文件：91.74 Kbytes Page：13 Pages | PHILIPS 飞利浦 | | |
PHD36N03LT | N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | |
N-channel TrenchMOS logic level FET | ETC 知名厂家 | ETC | | |
N-channel TrenchMOS logic level FET 文件：91.74 Kbytes Page：13 Pages | PHILIPS 飞利浦 | | ||
N-CHANNEL ENHANCEMENT MODE 文件：204.45 Kbytes Page：5 Pages | UTC 友顺 | |
PHD36N03LT产品属性
- 类型
描述
- 型号
PHD36N03LT
- 功能描述
两极晶体管 - BJT TAPE13 MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
SOT252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI |
05+ |
TO252 |
389 |
原装现货 |
|||
PHI |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
恩XP |
2023+ |
TO252 |
2500 |
十五年行业诚信经营,专注全新正品 |
|||
恩XP |
25+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
25+ |
TO252 |
90000 |
全新原装现货 |
|||
PHI |
2450+ |
TO252 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
2023+ |
TO-252 |
5800 |
进口原装,现货热卖 |
|||
恩XP |
20+ |
SOT428TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
24+ |
TO252 |
9860 |
原装现货/放心购买 |
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PHD36N03LT规格书下载地址
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PHD36N03LT数据表相关新闻
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