位置：首页 > IC中文资料第1776页 > PHP21N06T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PHP21N06T | TrenchMOSOtransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconverters | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   |
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channelTrenchMOSÔtransistorLogiclevelFET FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. Applications:- •d.c.tod.c.converters •swi | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=19A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=70mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Logiclevelcompatible Applications: •d.c.tod.c.co | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | |
PHP21N06T产品属性
- 类型
描述
- 型号
PHP21N06T
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PH |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
PHI |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
恩XP |
24+ |
TO220 |
25540 |
郑重承诺只做原装进口现货 |
|||
恩XP |
24+ |
TO-220 |
65200 |
一级代理/放心采购 |
|||
恩XP |
1000 |
19+ |
8000 |
TO-220 |
|||
恩XP |
25+ |
SOT78 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
PH |
24+ |
TO-220-3 |
8866 |
||||
恩XP |
24+ |
TO220AB |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
恩XP |
22+ |
TO-220 |
20000 |
深圳原装现货正品有单价格可谈 |
|||
恩XP |
1701+ |
TO-220 |
7500 |
只做原装进口,假一罚十 |
PHP21N06T芯片相关品牌
PHP21N06T规格书下载地址
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DdatasheetPDF页码索引
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