1.1 General description

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Suitable for high frequency

applications due to fast switching

characteristics

Suitable for logic level gate drive

sources

1.3 Applications

DC-to-DC converters

Lithium-ion battery applications