Dual N-channel TrenchMOS logic level FET

1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits

PHKD13N03LT - Dual N-channel TrenchMOS logic level FET

Dual N-channel TrenchMOS logic level FET

Dual TrenchMOS??logic level FET

文件：241.47 Kbytes Page：12 Pages

Dual N-Channel 30 V (D-S) MOSFET

文件：1.05121 Mbytes Page：9 Pages

OptiMOS짰2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

N-Channel 30-V (D-S) MOSFET

文件：960.46 Kbytes Page：8 Pages

OptiMOS짰2 Power-Transistor

文件：280.12 Kbytes Page：9 Pages