1.1 General description

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Simple gate drive required due to low

gate charge

 Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

 DC-to-DC convertors

 Lithium-ion battery applications

 Notebook computers

 Portable equipment