位置：首页 > IC中文资料第1878页 > PHD63NQ03LT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHD63NQ03LT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | |
PHD63NQ03LT | TrenchMOS logic level FET | ETC 知名厂家 | ETC | |
PHD63NQ03LT | TrenchMOS logic level FET 文件：104.28 Kbytes Page：14 Pages | Philips 飞利浦 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
TrenchMOS logic level FET 文件：104.28 Kbytes Page：14 Pages | Philips 飞利浦 | |
PHD63NQ03LT产品属性
- 类型
描述
- 型号
PHD63NQ03LT
- 制造商
NXP Semiconductors
- 功能描述
MOSFET N 30V D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
07+ |
TO-252 |
7500 |
||||
恩XP |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
|||
恩XP |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
PHILPS |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
PHI |
24+ |
TO-252 |
20000 |
只做原厂渠道 可追溯货源 |
|||
PHI |
1709+ |
TO-252/D- |
32500 |
普通 |
|||
恩XP |
23+ |
TO-252 |
10000 |
原厂原装正品 |
|||
PHI |
04+ |
SOT-252 |
671 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
恩XP |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
PHD63NQ03LT规格书下载地址
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DdatasheetPDF页码索引
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