位置：首页 > IC中文资料第7053页 > PHB63NQ03LT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHB63NQ03LT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | |
PHB63NQ03LT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | |
PHB63NQ03LT | TrenchMOS logic level FET 文件：104.28 Kbytes Page：14 Pages | Philips 飞利浦 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | | ||
TrenchMOS logic level FET 文件：104.28 Kbytes Page：14 Pages | Philips 飞利浦 | |
PHB63NQ03LT产品属性
- 类型
描述
- 型号
PHB63NQ03LT
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
TrenchMOS logic level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TO263 |
37500 |
原装正品现货,价格有优势! |
|||
PHI |
25+ |
TO263 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
PHI |
2001 |
TO263 |
559 |
原装现货海量库存欢迎咨询 |
|||
恩XP |
23+ |
TO-263 |
2700 |
原厂原装正品 |
|||
恩XP |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
N |
25+ |
SOT404(D |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
恩XP |
2022+ |
12888 |
原厂代理 终端免费提供样品 |
||||
PHI |
08+ |
TO-263 |
20000 |
普通 |
|||
PHI |
24+ |
TO263 |
559 |
||||
PHI |
24+ |
NA/ |
400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
PHB63NQ03LT规格书下载地址
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DdatasheetPDF页码索引
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