isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistors Avalanche energy rated

PowerMOS transistors Avalanche energy rated

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PowerMOS transistors Avalanche energy rated

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isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

N-channel Enhancement Mode Power MOSFET

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N-Channel MOSFET

文件：784.87 Kbytes Page：8 Pages

N-Channel MOSFET

文件：784.87 Kbytes Page：8 Pages