位置：首页 > IC中文资料第6757页 > PH3134
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM |   | ||
Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MACOM | | ||
Radar Pulsed Power Transistor, 11 W, lms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P | MACOM | | ||
Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor, 20W, 300us Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P | MACOM | | ||
Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MACOM | | ||
Radar Pulsed Power Transistor 25W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor, 3OW, lms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic P | MACOM | | ||
Radar Pulsed Power Transistor, SW, 300ms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Effkiency Interdigitated Geometty • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • Hermetic Metal/Ceramic Pa | MACOM | | ||
Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor 65W, 3.1-3.4 GHz, 100關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance Matching • HermeticMetaVCeramic Pac | MACOM | | ||
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10 Duty 3.1 - 3.4 GHz Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package | MACOM | | ||
Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami | MA-COM | | ||
Radar Pulsed Power Transistor 文件：646.7 Kbytes Page：4 Pages | MA-COM | | ||
Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1μs Pulse, 10% Duty | MACOM | | ||
Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty 文件：107.69 Kbytes Page：3 Pages | MACOM | | ||
Radar Pulsed Power Transistor 文件：107.69 Kbytes Page：3 Pages | MA-COM | | ||
Bipolar | MACOM | | ||
Radar Pulsed Power Transistor 文件：649.69 Kbytes Page：4 Pages | MA-COM | | ||
包装：托盘 描述：RF TRANS NPN 65V 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
Bipolar | MACOM | | ||
Radar Pulsed Power Transistor 30W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty 文件：100.04 Kbytes Page：2 Pages | MACOM | | ||
包装：托盘 描述：RF TRANS NPN 65V 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300關s Pulse, 10 Duty 文件：100.66 Kbytes Page：2 Pages | MACOM | | ||
Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages | MA-COM | | ||
Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages | MA-COM | | ||
Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages | MA-COM | | ||
Radar Pulsed Power Transistor 文件：100.66 Kbytes Page：2 Pages | MA-COM | | ||
Radar Pulsed Power Transistor 75W, 3.1-3.4 GHz, 1關s Pulse, 10 Duty 文件：99.51 Kbytes Page：2 Pages | MA-COM | | ||
Radar Pulsed Power Transistor,75W 1ms Pulse,10 Duty 3.1-3.4GHz 文件：142.94 Kbytes Page：2 Pages | MACOM | | ||
FLAT WASHERS NYLON FIBRE [KEYSTONE] NYLON RETAINING WASHERS FLAT WASHERS – NYLON & FIBRE INTERNAL TOOTH WASHERS STEEL LOCK WASHERS STEEL FLAT WASHERS | ETC2List of Unclassifed Manufacturers ETC未分类制造商 | | ||
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION FEATURES ■ Superior Temperature Stability ■ Operation From Unregulated Supply ■ Open-Collector 25 mA Output ■ Reverse Battery Protection ■ Activate With Small, Commercially Available Permanent Magnets ■ Solid-State Reliability ■ Small Size ■ Resistant to Physical Stress | ALLEGRO | | ||
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION FEATURES ■ Superior Temperature Stability ■ Operation From Unregulated Supply ■ Open-Collector 25 mA Output ■ Reverse Battery Protection ■ Activate With Small, Commercially Available Permanent Magnets ■ Solid-State Reliability ■ Small Size ■ Resistant to Physical Stress | ALLEGRO | | ||
BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature performance is made possible through a novel Schmitt trigger circuit that maintains op | ALLEGRO | | ||
491 MHz Center Frequency 文件：58.36 Kbytes Page：3 Pages | KR | |
PH3134产品属性
- 类型
描述
- 型号
PH3134
- 制造商
M/A-COM Technology Solutions
- 功能描述
TRANSISTOR,BIPOLAR,RADAR,10W,3.1-3.4GHZ - Bulk
- 制造商
M/A-COM Technology Solutions
- 功能描述
RF POWER TRANSISTOR BIPOLAR/HBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MA/COM |
22+ |
NA |
5000 |
只做原装,价格优惠,长期供货。 |
|||
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
|||
PHI |
23+ |
TO-59 |
122556 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MA/COM |
24+ |
129 |
现货供应 |
||||
MACOM |
23+ |
NA |
25000 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
MA/COM |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MCM |
24+ |
999 |
|||||
M/A-COM |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
M/A-COM |
1923+ |
原厂封装 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
|||
MA/COM |
2318+ |
原装正品 |
4285 |
十年专业专注 优势渠道商正品保证 |
PH3134规格书下载地址
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