丝印代码：PGA205BP；Programmable Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAIN: PGA204: G=1, 10, 100, 1000V/V PGA205: G=1, 2, 4, 8V/V LOW OFFSET VOLTAGE: 50mV max LOW OFFSET VOLTAGE DRIFT: 0.25mV/°C LOW INPUT BIAS CURRENT: 2nA max LOW QUIESCENT CURRENT: 5.2mA typ NO LOGIC SUPPLY REQUIRED 16-PIN PLASTIC DIP, SOL-16 PACKAGES APP

丝印代码：PGA205BP；Programmable Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAIN: PGA204: G=1, 10, 100, 1000V/V PGA205: G=1, 2, 4, 8V/V LOW OFFSET VOLTAGE: 50mV max LOW OFFSET VOLTAGE DRIFT: 0.25mV/°C LOW INPUT BIAS CURRENT: 2nA max LOW QUIESCENT CURRENT: 5.2mA typ NO LOGIC SUPPLY REQUIRED 16-PIN PLASTIC DIP, SOL-16 PACKAGES APP

INSTRUMENTATION AMPLIFIER

文件：794.54 Kbytes Page：20 Pages

Programmable Gain INSTRUMENTATION AMPLIFIER

文件：261.24 Kbytes Page：14 Pages

INSTRUMENTATION AMPLIFIER

文件：794.54 Kbytes Page：20 Pages

N-channel enhancement mode vertical D-MOS transistor

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HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

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Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

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