FAST RECOVERY RECTIFIER

VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.0 A FEATURES Low cost Diffused junction Glass passivated junction Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 9

Fast Recovery Rectifiers

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2.0 AMP SILICON RECTIFIERS

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FAST RECOVERY RECTIFIERS

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2A,500V,Fast Recovery Rectifiers

2.0A Axial Leaded Rectifier

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2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

2 AMP / NPN-PNP Pirgo silicon planar power transistors

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE 160 Volts 4 Watt 90MHz CURRENT - 2.0 Amperes)

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.