PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ

NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in an SC-59 plastic package. NPN complement: PDTC114EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface- Mounted Device (SMD) plastic package. NPN complement: PDTC114EM 2. Features and benefits . 100 mA output current capability . Built-in bias resistors . Simplifies circuit desig

NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP resistor-equipped transistor; R1 = 10 k廓, R2 = 10 k廓

General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EMB Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias transistors ■

50 V, 100 mA PNP resistor-equipped transistors

General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ reduced pick and place costs

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits  100 mA output current capability  built-in bias resistors  simplifies circuit design  reduces component count  reduced pick and place costs  low package height of 0.37 mm  AEC-Q101 qualified  suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA PNP resistor-equipped transistors

1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits 1.3 Applications Table 1. Product overview Type number R1

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

50 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint

50 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: PDTA14

50 V, 100 mA PNP resistor-equipped transistors

1. General description 100 mA PNP Resistor-Equipped Transistor (RET) family in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for s

NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114ET-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT323 plastic package. NPN complement: PDTC114EU. FEATURES • Built-in bias resistors R1 and R2 (typ. 10 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for spac

PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓

NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.

50 V, 100 mA PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

1. General description PNP Resistor-Equipped Transistor (RET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114EU 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces comp

PNP resistor-equipped transistor

PNP resistor-equipped transistors; R1 = 10 kΩ; R2 = 10 kΩ

PNP resistor-equipped transistor

文件：66.38 Kbytes Page：8 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR） 描述：TRANS PREBIAS PNP 150MW SC-75 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP resistor-equipped transistor

文件：54.68 Kbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

PNP resistor-equipped transistor

文件：69.89 Kbytes Page：8 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 RED 2 WHITE 4 GREEN/YELLOW 2) Cable Assembly 4 Components Cabled a) T

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 RED 2 WHITE 4 GREEN/YELLOW 2) Cable Assembly 4 Components Cabled a) T

STATIC SEALS

DESCRIPTION The BECA 114 is a BS ring composed of a metal ring with a rectangular crosssection, to the inside of which a rubber ring with a trapezoidal cross-section has been bonded and vulcanised. APPLICATIONS Sealing under the screw heads and bolts General mechanics Motors Pipe fit

Easy Identification and Tracing with 10-color Cable

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Dual-In-Line Stratum 3 OCXO

文件：55.22 Kbytes Page：2 Pages