PD840价格

参考价格:¥7.9314

型号:PD84001 品牌:STMicroelectronics 备注:这里有PD840多少钱,2025年最近7天走势,今日出价,今日竞价,PD840批发/采购报价,PD840行情走势销售排行榜,PD840报价。
型号 功能描述 生产厂家 企业 LOGO 操作

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

ETCList of Unclassifed Manufacturers

未分类制造商

RF power transistor the LdmoST plastic family

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

STMICROELECTRONICS

意法半导体

RF power transistor The LdmoST plastic family

Description The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD84002’s superior gain and ef

STMICROELECTRONICS

意法半导体

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

ETCList of Unclassifed Manufacturers

未分类制造商

RF power transistor, LDmoST plastic family

Description The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity a

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

STMICROELECTRONICS

意法半导体

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

STMICROELECTRONICS

意法半导体

封装/外壳:TO-243AA 包装:卷带(TR) 描述:FET RF 25V 870MHZ 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

RF Power LDMOS transistor

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:托盘 描述:FET RF 25V 870MHZ PWRSO-10RF 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

RF Power LDMOS transistor

STMICROELECTRONICS

意法半导体

Excellent thermal stability

文件:214.27 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

RF Power LDMOS transistor

STMICROELECTRONICS

意法半导体

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

KEXIN

科信电子

8A 500V N-channel Enhancement Mode Power MOSFET

文件:1.63311 Mbytes Page:12 Pages

WXDH

东海半导体

9Amps竊?00V N-CHANNEL MOSFET

文件:122.87 Kbytes Page:5 Pages

KIA

可易亚半导体

8A竊?00V N-CHANNEL MOSFET

文件:215.89 Kbytes Page:6 Pages

KIA

可易亚半导体

8A 500V N-CHANNEL MOSFET

文件:242.9 Kbytes Page:7 Pages

KIA

可易亚半导体

PD840产品属性

  • 类型

    描述

  • 型号

    PD840

  • 功能描述

    Analog IC

更新时间:2025-10-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
15000
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法半导体
24+
PowerFLAT (5x5)
10000
十年沉淀唯有原装
STM
15+
POWERFLAT
15000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
25+
POWERFLAT
32360
ST/意法全新特价PD84006L-E即刻询购立享优惠#长期有货
ST/意法
2517+
POWERFLAT
8850
只做原装正品现货或订货假一赔十!
23+
50000
只做原装正品
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法半导体
23+
PowerFLAT (5x5)
12820
正规渠道,只有原装!
ST
18+
DFN
11389
全新原装现货,可出样品,可开增值税发票
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百

PD840数据表相关新闻