RF Power LDMOS transistor

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and relia Excellent thermal stability\nCommon source configuration\nBroadband performances: POUT = 6 W with 13 dB gain @ 870 MHz\nPlastic package\nESD protection\nIn compliance with the 2002/95/EC European directive;

Excellent thermal stability

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封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 25V 870MHZ PWRSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

PASSIVE DEVICES MNS Capacitors

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Three-Phase Wave Motor Driver IC

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Three-Phase Wave Motor Driver IC

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Three-Phase Wave Motor Driver IC

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