位置:PD84008STR-E > PD84008STR-E详情

PD84008STR-E中文资料

厂家型号

PD84008STR-E

文件大小

362.93Kbytes

页面数量

15

功能描述

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

PD84008STR-E数据手册规格书PDF详情

Description

The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84008-E’s superior linearity performance makes it an ideal solution for portable radio applications.

The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC european directive

PD84008STR-E产品属性

  • 类型

    描述

  • 型号

    PD84008STR-E

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

更新时间:2026-8-1 15:13:00
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