40 V, 4 A NPN low VCEsat (BISS) transistor

40 V, 4 A NPN low VCEsat (BISS) transistor

1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c

20 V, 5.3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector cur

20 V, 5.8 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC

40 V, 4 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c

40 V PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND Features ■ Ultra low collector-emitter saturation voltage VCEsat ■ 4 A continuous collector current capability IC (DC) ■ Up

40 V, 4 A PNP low VCEsat (BISS) transistor

40 V, 4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC • Up to 15

20 V, 5.1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

20 V, 5.5 A PNP low VCEsat (BISS) transistor

20 V, 5.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

封装/外壳：SC-74，SOT-457 包装：卷带（TR） 描述：TRANS NPN 40V 4A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 4 A NPN low VCEsat transistor

20 V, 5.3 A NPN low VCEsat (BISS) transistor

20 V, 5.3 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 5.3A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 5.3 A NPN low VCEsat transistor

20 V, 5.1 A PNP low VCEsat (BISS) transistor

2 (50.8 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Screw, servo and bushing mount types available • Large range of ohmic values: 5  to 85 k • Extra taps upon request • Gangable up to 6 sections on a same shaft • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Socket terminal strip Screw connection

The socket terminal strip 302 is one of our smallest socket terminal strips. It is available in 8 mm pitch with 1- to 12-pole design and can be easily cut to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-ver

Extra taps upon request

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SCREW TYPE SERIES

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Indicates Phase Presence

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