8.0A BRIDGE RECTIFIER

Features • High Current Capability • Surge Overload Rating to 125A Peak • High Case Dielectric Strength of 1500V • Ideal for Printed Circuit Board Application • UL Listed Under Recognized Component Index, File Number E94661

8.0A BRIDGE RECTIFIER

Features • Diffused Junction • High Current Capability • Surge Overload Rating to 125A Peak • High Case Dielectric Strength of 1500V • Ideal for Printed Circuit BoardApplication • Plastic Material - UL Flammability Classification 94V-0

封装/外壳：4-方形，PBPC-8 包装：管件 描述：BRIDGE RECT 1P 100V 6A PBPC-8 分立半导体产品 二极管 - 桥式整流器

8.0A BRIDGE RECTIFIER

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Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat