PLCC-28/JLCC-28/LCC-28 to DIP-28 SMT Adapter (1.27 mm pitch, 12.5 x 12.5 mm body) Compact Series

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PLCC-28/JLCC-28/LCC-28 (Pin 1 In) Compact Series to PGA-28 SMT Adapter (1.27 mm pitch, 12.5 x 12.5 mm body)

文件：234.23 Kbytes Page：3 Pages

包装：散装 描述：PLCC-28 TO PGA-28 PIN 1 IN SMT 原型开发，制造品 适配器，分接板

PLCC-28/JLCC-28/LCC-28 (Pin 1 Out) Compact Series to PGA-28 SMT Adapter (1.27 mm pitch, 12.5 x 12.5 mm body)

文件：236.41 Kbytes Page：3 Pages

包装：散装 描述：PLCC-28 TO PGA-28 PIN 1 OUT SMT 原型开发，制造品 适配器，分接板

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan