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isc N-Channel Mosfet Transistor

DESCRITION ·Designed for high efficiency switch mode power supply. FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple D

ISC

无锡固电

Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

IRF

N-channel Enhancement Mode Power MOSFET

文件:374.44 Kbytes Page:6 Pages

ESTEK

伊泰克电子

N-Channel MOSFET

文件:784.87 Kbytes Page:8 Pages

Fairchild

仙童半导体

N-Channel MOSFET

文件:784.87 Kbytes Page:8 Pages

Fairchild

仙童半导体

更新时间:2025-10-16 11:19:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
IR
25+23+
TO-220
20014
绝对原装正品全新进口深圳现货
TAIYO/太诱
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
72000
一级代理-主营优势-实惠价格-不悔选择
IR
23+
TO-220
8000
只做原装现货
IR
23+
TO-220
3000
原装正品假一罚百!可开增票!
IR
22+
DIP-12
12500
进口原装!现货库存
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
IR
24+
TO220
990000
明嘉莱只做原装正品现货
IR
22+
TO-220
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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