P800 Solid State Power Controller

The P800 device specified herein is a solid state power controller offering combined switching, protection and status reporting features. The status signals are implemented using opto-isolators to give galvanic isolation between the controlling and power circuits. Internal power supplies are derived

Coated Abrasive Sheets And Rolls 3M 734 Wetordry Paper Sheets

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丝印代码：P80C；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

通用半导体放电管

P8000SC系列半导体放电管产品具有极间电容小，漏电流小，浪涌吸收能力强，稳定性强等产品特性。这款表面贴装器件非常适用于电话、应答机、调制解调器、传真机接口等客户端设备（CPE），还可用于有一定过流保护要求的T1/E1/J1中继卡等的过压保护装置。 • 采用标准表面贴装式SMB封装\n• 10/1000μs波形时的峰值浪涌能力达到100A\n• 10/700μs波形时的峰值浪涌能力达到6KV\n• 响应速度快,达到uS级\n• 漏电流小\n• 极间电容低\n• 不含卤素且符合RoHS及Reach测试标准;

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SIDACTORLH BI 734V 250A DO214 2L 电路保护 TVS - 晶闸管

P-Channel Logic Level Enhancement

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

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丝印代码：DPAK；N-Channel Enhancement Mode MOSFET

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N-Channel 100 V (D-S) MOSFET

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MOSFETs

N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode MOSFET

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SILICON RECTIFIER DIODES

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Standard silicon rectifier diodes

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SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

Standard silicon rectifier diodes

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For surface mounted applications to optimize board space

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Standard silicon rectifier diodes

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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