Coated Abrasive Sheets And Rolls 3M 734 Wetordry Paper Sheets

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P800 Solid State Power Controller

丝印代码：P80C；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

N-Channel 100 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 Rg Tested • 100 Avalanche Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

SILICON RECTIFIER DIODES

PRV : 50 - 800 Volts Io : 8.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free

通用半导体放电管

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SIDACTORLH BI 734V 250A DO214 2L 电路保护 TVS - 晶闸管

P-Channel Logic Level Enhancement

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：296.5 Kbytes Page：5 Pages

丝印代码：DPAK；N-Channel Enhancement Mode MOSFET

文件：657.63 Kbytes Page：7 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00994 Mbytes Page：7 Pages

MOSFETs

N-Channel Enhancement Mode MOSFET

文件：742.62 Kbytes Page：8 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：351.12 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：356.44 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：794.34 Kbytes Page：8 Pages

N-Channel Enhancement Mode MOSFET

文件：455.95 Kbytes Page：5 Pages

N-Channel Enhancement Mode Field Effect Transistor

文件：362.82 Kbytes Page：4 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：396.3 Kbytes Page：5 Pages

Dual N-Channel Enhancement Mode MOSFET

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SILICON RECTIFIER DIODES

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Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

SILICON RECTIFIER DIODES

文件：38.44 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

Standard silicon rectifier diodes

文件：491.06 Kbytes Page：2 Pages

For surface mounted applications to optimize board space

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Standard silicon rectifier diodes

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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