| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 |   | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2.4 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJIT 強茂 | | ||
500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3270 |
原厂直销,现货供应,账期支持! |
|||
ST |
03+ |
TO-220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
门市 |
2018 |
1 |
|||||
ST/意法 |
23+ |
61350 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
ST |
2023+ |
TO.220-3 |
50000 |
原装现货 |
|||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
24+ |
5000 |
公司存货 |
|||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
P3NA50FI芯片相关品牌
P3NA50FI规格书下载地址
P3NA50FI参数引脚图相关
- pt1000
- pt100
- pled
- pl2303
- pl-21
- PKE
- PIN二极管
- pic微控制器
- pic单片机
- pcb设计
- pcb软件
- pcb技术
- PCB材料
- PCBA
- pc817
- pc133
- pc100
- PC/104
- p800
- p600
- P4000LB
- P4000LA
- P4000EC
- P4000EB
- P4000EA
- P-4-0
- P3Z22V1
- P3V9FB2
- P3V9FB1
- P3V9B
- P3V6FB2
- P3V6FB1
- P3V6B
- P3V3FB2
- P3V3FB1
- P3V3B
- P3V0FB2
- P3V0FB1
- P3V0B
- P3S3FE3
- P3NC70Z
- P3NC6FP
- P3NC60ZFP
- P3NC60FPIC
- P3NC60FP
- P3NC60
- P3NC39-D
- P3NB90FP
- P3NB90
- P3NB80FP
- P3NB80
- P3NB60FP
- P3NB60
- P3NB100FP
- P3NB100
- P3NA90FP
- P3NA90FI
- P3NA90
- P3NA80
- P3NA60
- P3NA50
- P3NA100FP
- P3NA100FI
- P3NA100F
- P3NA100
- P3N90
- P3N85FI
- P3N80
- P3N60ZFP
- P3N60HA
- P3N60FI
- P3N60E
- P3N60
- P3N50E
- P3N1L60
- P3N1F5223J
- P3N150
- P3N120E
- P3N120
- P3N100FI
- P3MU_14
- P3LU_14
- P3KU_14
- P3IU_14
- P3GA-11
- P3G-08
- P3DU_14
- P3CU_14
- P3C1256
- P3C1041
- P3C1024
- P3C1021
- P3C1011
- P3BU_14
- P3AU_14
- P39FB3
- P39FB2
- P39FB1
- P3981
- P3937
P3NA50FI数据表相关新闻
P3A9606JKZ
P3A9606JKZ
2024-2-22P4SMA10CA
P4SMA10CA
2023-5-15P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3P3403ACL全新原装现货
随时可发货
2019-9-17P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15P35-4304-000-200-模拟杂项
特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
