| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PJD3NA50 | 500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJIT 強茂 |   | |
PJD3NA50 | HV MOSFET | PANJIT 強茂 | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2.4 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICS 意法半导体 | | ||
500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJIT 強茂 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
PANJIT |
23+ |
TO252 |
282200 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PANJIT |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-252AA |
986966 |
国产 |
|||
PANJIT/强茂 |
2511 |
TO-252 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
24+ |
N/A |
74000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
PANJIT |
25+ |
TO-252 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
PJD3NA50规格书下载地址
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PJD3NA50数据表相关新闻
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深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
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DdatasheetPDF页码索引
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