| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P3NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2.4 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) ■ SURFACE-MOUNTING D | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 |  | | |
500V N-Channel MOSFET 文件：274.6 Kbytes Page：7 Pages | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
QFP |
37500 |
原装正品现货,价格有优势! |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST |
24+ |
TO-220 |
200000 |
原装进口正口,支持样品 |
|||
ST |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/进口原 |
17+ |
TO-220 |
6200 |
||||
ST |
24+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
ST/意法 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
|||
ST/意法 |
24+ |
NA/ |
3270 |
原厂直销,现货供应,账期支持! |
|||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
P3NA50芯片相关品牌
P3NA50规格书下载地址
P3NA50参数引脚图相关
- pt1000
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- P3MXP1039PC
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- P3MU-247R2ELF
- P3MU-243R3ELF
- P3MU-2424ELF
- P3MU-2418ELF
- P3MU-2415ELF
- P3MU-2412ELF
- P3MU-2409ELF
- P3MU-2405ELF
- P3MU-127R2ELF
- P3MU-123R3ELF
- P3MU-1224ELF
- P3MU-1218ELF
- P3MU-1215ELF
- P3MU-1212ELF
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- P3C1256
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- P3C1024
- P3C1021
- P3C1011
- P3BU_14
- P3AU_14
- P39FB3
- P39FB2
- P39FB1
- P3981
- P3937
P3NA50数据表相关新闻
P3A9606JKZ
P3A9606JKZ
2024-2-22P4SMA10CA
P4SMA10CA
2023-5-15P412W，P413，P413W，P414，P414W，P415，P415W，P421
P412W，P413，P413W，P414，P414W，P415，P415W，P421
2020-3-3P3403ACL全新原装现货
随时可发货
2019-9-17P4010S
P4010S，全新原装当天发货或门市自取0755-82732291.
2019-9-15P35-4304-000-200-模拟杂项
特点 ·宽带0.5 - 16GHz的 ·低插入损耗;4分贝的典型值在8GHz的 ·衰减0.5dB步进到31.5分贝 ·开关速度快 ·通过提高性能的砷化镓过孔 P35 -4304-000 -200是一种高性能砷化镓单片提供6位数字衰减器的衰减步长为0.5dB31.5分贝范围。它是适用于宽带通信，仪器仪表和电子战的使用应用。衰减器是免费0V/-5V或0/-8V信号控制线的应用程序来控制按照下面的真值表。通过修改控制线，实现全衰减范围组合。模具制造，使用建设部0.5mm栅极长度的MESFET制程（S20）。它是完全
2012-12-20
DdatasheetPDF页码索引
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