| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P2106U | solid state crowbar devices Product Description SIDACtorcomponents are solid state crowbar devices designed to protect telecom equipment during hazardous transient conditions. Capitalizing on the latest in thyristor advancements, Teccor makes SIDACtordevices with a patented ion implant technology. This technology ensures | TECCOR |   | |
Multiport Balanced SIDACtor 文件：172.06 Kbytes Page：3 Pages | LITTELFUSE 力特 | | ||
SIDACtor Balanced Multiport Series - MS-013 文件：2.9268 Mbytes Page：5 Pages | LITTELFUSE 力特 | | ||
Multiport Balanced SIDACtor Device 文件：178.77 Kbytes Page：3 Pages | LITTELFUSE 力特 | | ||
基带语音DS1保护 | LITTELFUSE 力特 | | ||
封装/外壳：6-SMD，鸥翼 包装：管件 描述：THYRISTOR 170V 150A 6SMD GW 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 | | ||
SIDACtor Balanced Multiport Series - MS-013 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
SIDACtor Balanced Multiport Series - MS-013 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
The series provides a dual port surface mount solution that enables voice 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
封装/外壳：6-SMD，鸥翼 包装：散装 描述：THYRISTOR 170V 150A 6SMD GW 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 | | ||
基带语音DS1保护 | LITTELFUSE 力特 | | ||
基带语音DS1保护 | LITTELFUSE 力特 | | ||
Multiport Balanced SIDACtor Device 文件：178.77 Kbytes Page：3 Pages | LITTELFUSE 力特 | | ||
SIDACtor짰 Balanced Multiport Series - MS-013 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
The series provides a dual port surface mount solution that enables voice 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
Multiport Balanced SIDACtor Device 文件：178.77 Kbytes Page：3 Pages | LITTELFUSE 力特 | | ||
SIDACtor짰 Balanced Multiport Series - MS-013 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
The series provides a dual port surface mount solution that enables voice 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
Multiport Balanced SIDACtor Device 文件：178.77 Kbytes Page：3 Pages | LITTELFUSE 力特 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
P2106U产品属性
- 类型
描述
- Min Capacitance Tip to Ring (pF)：
10
- di/dt @ 110°C (A/μs)：
500
- DRM.\>IDRM @ VDRM (μA)：
5
- Holding Current (mA)：
150
- Iscurr：
800
- Package Size：
MS-013
- Regulatory Requirements：
GR1089 INTER-BUILDING (SERIESGR1089 INTRA-BUILDINGITU K.20 (SERIES RESISTANCE NEITU K.20 ENHANCED (SERIES RESIITU K.21 ENHANCED (SERIES RESITIA-968-A (SERIES RESISTANCE NYD/T 993-1998 WITHOUT PRIMARY
- Ipp10x1000：
45
- Ipp10x160：
90
- Ipp10x560：
50
- Ipp10x700：
75
- Ipp2x10：
150
- Ipp5x310：
75
- Ipp5x320：
75
- Ipp8x20：
150
- Peak Off-State Voltage Tip to Ring (V)：
170
- DRM-1\>Pins Tip to Ring：
3-1
- DRM-2\>Pins Tip to Ground：
3-2
- DRM-3\>Pins Ring to Ground：
1-2
- Switching Voltage Tip to Ring (V)：
250
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITTELFUS |
24+ |
SOP-6 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
LITTELF |
24+ |
SOP-6 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TECCOR |
20+ |
SOP6 |
2960 |
诚信交易大量库存现货 |
|||
LITTELFUSE |
07+ |
SOP-6 |
558 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LITTELFUSE |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
LITTELFUSE/力特 |
24+ |
SOP-6 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
24+ |
5000 |
公司存货 |
|||||
LITTELFUSE/力特 |
2021+ |
SOP-6 |
9000 |
原装现货,随时欢迎询价 |
|||
LITTELF |
23+ |
SOP-6 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
LITTELFUSE |
23+ |
SOP-6 |
558 |
全新原装正品现货,支持订货 |
P2106U规格书下载地址
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P2106U数据表相关新闻
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P2041NXN7PNC
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2019-11-8
DdatasheetPDF页码索引
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