| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P2106UCL | Multiport Balanced SIDACtor Device 文件：178.77 Kbytes Page：3 Pages | LITTELFUSE 力特 |   | |
P2106UCL | SIDACtor짰 Balanced Multiport Series - MS-013 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | |
P2106UCL | 基带语音DS1保护 | LITTELFUSE 力特 | | |
封装/外壳：6-SMD，鸥翼 包装：管件 描述：THYRISTOR 170V 400A 6SMD GW 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 | | ||
封装/外壳：6-SMD，鸥翼 包装：管件 描述：THYRISTOR 170V 400A 6SMD GW 电路保护 TVS - 晶闸管 | LITTELFUSE 力特 | | ||
The series provides a dual port surface mount solution that enables voice 文件：156.73 Kbytes Page：5 Pages | LITTELFUSE 力特 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped | SUTEX | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is | NEC 瑞萨 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda | SUTEX | |
P2106UCL产品属性
- 类型
描述
- Min Capacitance Tip to Ring (pF)：
15
- di/dt @ 110°C (A/μs)：
500
- DRM.\>IDRM @ VDRM (μA)：
5
- Holding Current (mA)：
150
- Iscurr：
800
- Package Size：
MS-013
- Regulatory Requirements：
GR1089 INTER BUILDINGGR1089 INTRA-BUILDINGITU K.20ITU K.20 ENHANCEDITU K.21 ENHANCEDTIA-968-AYD/T 993-1998 WITH PRIMARYYD/T 993-1998 WITHOUT PRIMARY
- Ipp10x1000：
100
- Ipp10x160：
200
- Ipp10x560：
150
- Ipp10x700：
200
- Ipp2x10：
500
- Ipp5x310：
200
- Ipp5x320：
200
- Ipp8x20：
400
- Peak Off-State Voltage Tip to Ring (V)：
170
- DRM-1\>Pins Tip to Ring：
3-1 6-4
- DRM-2\>Pins Tip to Ground：
3-2 6-5
- DRM-3\>Pins Ring to Ground：
1-2 4-5
- Switching Voltage Tip to Ring (V)：
250
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROCKWELL |
2018+ |
QFP |
26976 |
代理原装现货/特价热卖! |
|||
CONEXANT |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
|||
P2107C-4 |
25+ |
4 |
4 |
||||
CONEXANT |
2025+ |
TQFP |
3827 |
全新原厂原装产品、公司现货销售 |
|||
CONEXANT |
2450+ |
QFP |
6540 |
原装现货或订发货1-2周 |
|||
Conexant |
24+ |
QFP- |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST |
25+ |
NA |
20000 |
原装，请咨询 |
|||
CONEXANT |
25+ |
TQFP |
2568 |
原装优势!绝对公司现货 |
|||
CONEXANT |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Conexant |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
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P2106UCL规格书下载地址
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P2106UCL数据表相关新闻
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P2041NXN7PNC
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2021-3-16P24C02A-TSH-MIT
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2019-11-8
DdatasheetPDF页码索引
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