型号 功能描述 生产厂家&企业 LOGO 操作

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
更新时间:2025-7-26 20:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
25+
TO-263
70
原装正品,假一罚十!
SR
21+
TO251
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
CET
24+
50000
CET
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
太友
24+
N/A
6666
公司现货库存,支持实单
SR
23+
T0-263
5000
原装正品,假一罚十
CET/華瑞
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
CET/華瑞
20+
TO-263
17
现货很近!原厂很远!只做原装
CET
21+
TO-263
70
原装现货假一赔十

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