丝印代码：SIE；1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series

1FEATURES 2• Low IQ: 50 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 25 nV/√Hz at 1 kHz • Gain Bandwidth: 1 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to +125°C APPLICATIO

1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER

文件：2.5844 Mbytes Page：36 Pages

丝印代码：SIE；1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series

1FEATURES 2• Low IQ: 50 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 25 nV/√Hz at 1 kHz • Gain Bandwidth: 1 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to +125°C APPLICATIO

丝印代码：SIE；1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series

1FEATURES 2• Low IQ: 50 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 25 nV/√Hz at 1 kHz • Gain Bandwidth: 1 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to +125°C APPLICATIO

丝印代码：SIE；1-MHz, Micro-Power, Low-Noise, RRIO,1.8-V CMOS OPERATIONAL AMPLIFIER Precision Value Line Series

1FEATURES 2• Low IQ: 50 μA/ch • Wide Supply Range: 1.8 V to 5.5 V • Low Noise: 25 nV/√Hz at 1 kHz • Gain Bandwidth: 1 MHz • Low Input Bias Current: 0.2 pA • Low Offset Voltage: 0.5 mV • Unity-Gain Stable • Internal RF/EMI Filter • Extended Temperature Range: –40°C to +125°C APPLICATIO

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages