丝印代码：OP205A；OPAx205 2-μV, 0.04-μV/°C, Low-Power, Super Beta, Bipolar, e-trim™ Op Amps

1 Features • e-trim™ operational amplifier performance – Low offset voltage: 15 μV (max, high grade) – Low offset voltage drift: ±0.2 μV/°C (max, high grade) • Super beta inputs – Input bias current: 400 pA (max, high grade) – Input current noise: 110 fA/√Hz • Low noise – 0.1 to 10-Hz: 0.

丝印代码：OP205A；OPAx205 2-μV, 0.04-μV/°C, Low-Power, Super Beta, Bipolar, e-trim™ Op Amps

1 Features • e-trim™ operational amplifier performance – Low offset voltage: 25 μV (max), 15 μV (max, high grade) – Low offset voltage drift: ±0.5 μV/°C (max), ±0.2 μV/°C (max, high grade) • Super beta inputs – Input bias current: 500 pA (max) – Input current noise: 110 fA/√Hz • Low noise

丝印代码：OP205A；OPAx205 4-μV, 0.08-μV/°C, Low-Power, Super Beta, Bipolar, e-trim™ Op Amps

1 Features • e-trim™ operational amplifier performance – Low offset voltage: 25 μV (max), 15 μV (max, high grade) – Low offset voltage drift: ±0.5 μV/°C (max), ±0.2 μV/°C (max, high grade) • Super beta inputs – Input bias current: 500 pA (max) – Input current noise: 110 fA/√Hz • Low noise

丝印代码：OP205A；OPAx205 4-μV, 0.08-μV/°C, Low-Power, Super Beta, Bipolar, e-trim™ Op Amps

1 Features • e-trim™ operational amplifier performance – Low offset voltage: 25 μV (max), 15 μV (max, high grade) – Low offset voltage drift: ±0.5 μV/°C (max), ±0.2 μV/°C (max, high grade) • Super beta inputs – Input bias current: 500 pA (max) – Input current noise: 110 fA/√Hz • Low noise

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.