丝印代码：OPA177GP；OPA177 0.1-μV/°C Offset Drift, 10-μV Offset, Low-Noise, Bipolar Operational Amplifier

1 Features • Low offset voltage: 25 μV (max) • Low offset voltage drift: 0.3 μV/°C (max) • High open-loop gain: 134 dB (min) • Low quiescent current: 1.3 mA (typ) • Low input bias ±2 nA (max) • Wide supply voltage range: 6 V to 36 V • Replaces industry-standard op amps: OP-07, OP-77, OP-17

Precision OPERATIONAL AMPLIFIER

文件：171.44 Kbytes Page：9 Pages

Precision OPERATIONAL AMPLIFIER

文件：135.49 Kbytes Page：7 Pages

Precision OPERATIONAL AMPLIFIER

文件：302.37 Kbytes Page：11 Pages

Precision OPERATIONAL AMPLIFIER

文件：171.44 Kbytes Page：9 Pages

Precision OPERATIONAL AMPLIFIER

文件：302.37 Kbytes Page：11 Pages

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

Silicon epitaxial planar type

文件：45.06 Kbytes Page：2 Pages