Silicon epitaxial planar type

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Single Output Hall Effect Latch

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Hall IC

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA177H is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to pro

丝印代码：177H；Single Output Hall Effect Latch

GENERAL DESCRIPTION MA177H is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and a Schmitt trigger to pro

Single Output Hall Effect Latch

GENERAL DESCRIPTION MA177R is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

丝印代码：HMYWX；Single Output Hall Effect Latch

GENERAL DESCRIPTION MA177R is an integrated Hall effect latched sensor designed for electronic commutation of brush-less DC motor applications. The device is using HV BCD process includes an on-chip Hall voltage generator for magnetic sensing, a comparator that amplifies the Hall voltage, and

Single Output Hall Effect Latch

文件：231.64 Kbytes Page：5 Pages

Single Output Hall Effect Latch

文件：231.64 Kbytes Page：5 Pages

Hall IC

Single Output Hall Effect Latch

文件：231.64 Kbytes Page：5 Pages

Single Output Hall Effect Latch

文件：231.64 Kbytes Page：5 Pages

Hall IC

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.