N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

The RF MOSFET Line 100W, 400MHz, 28V

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET • Typical performance at 400 MH

N-CHANNEL BROADBAND RF POWER MOSFET

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The RF MOSFET Line 100W, 400MHz, 28V

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封装/外壳：744A-01 包装：托盘 描述：FET RF 2CH 65V 400MHZ 744A-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line 100W, 400MHz, 28V

The RF MOSFET Line

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MONROE 177A

TYPICAL APPLICATIONS  Converting, coating, and printing processes  Dry particle transport systems  “Static-free” environments  Explosive atmospheres - safely monitors potentially hazardous sites to detect charge build-up. Monroe 1036 sensors are factory mutual research approved: Class I,

SMD Power Inductor

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SMD Power Inductor

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SMD Power Inductor

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Hermetically Sealed 3.3V, Low IF, Wide VCC, High Gain Optocouplers

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