N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

The RF MOSFET Line 100W, 400MHz, 28V

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. N–Channel enhancement mode MOSFET • Typical performance at 400 MH

N-CHANNEL BROADBAND RF POWER MOSFET

文件：214.75 Kbytes Page：9 Pages

The RF MOSFET Line 100W, 400MHz, 28V

文件：438.01 Kbytes Page：11 Pages

封装/外壳：744A-01 包装：托盘 描述：FET RF 2CH 65V 400MHZ 744A-01 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 100W, 400MHz, 28V

The RF MOSFET Line

文件：438.01 Kbytes Page：11 Pages

MONROE 177A

TYPICAL APPLICATIONS  Converting, coating, and printing processes  Dry particle transport systems  “Static-free” environments  Explosive atmospheres - safely monitors potentially hazardous sites to detect charge build-up. Monroe 1036 sensors are factory mutual research approved: Class I,

SMD Power Inductor

文件：309.21 Kbytes Page：5 Pages

SMD Power Inductor

文件：309.21 Kbytes Page：5 Pages

SMD Power Inductor

文件：309.21 Kbytes Page：5 Pages

Hermetically Sealed 3.3V, Low IF, Wide VCC, High Gain Optocouplers

文件：169.12 Kbytes Page：11 Pages