Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

GaAs plastic infrared emitting diode

微功耗RRIO双通道运算放大器

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

文件：287.5 Kbytes Page：16 Pages

MicroConverter짰 12-Bit ADCs and DACs with Embedded High Speed 62-kB Flash MCU

文件：908.68 Kbytes Page：88 Pages

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Plastic Infrared Emitting Diode

Plastic Infrared Emitting Diode OP290 Series Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IR-transmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon photo

Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower RRIO Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

Micropower RRIO Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

Micropower RRIO Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower RRIO Operational Amplifiers

GENERAL DESCRIPTION The OP196 family of CBCMOS operational amplifiers features micropower operation and rail-to-rail input and output ranges. The extremely low power requirements and guaranteed opera tion from 3 V to 12 V make these amplifiers perfectly suited to monitor battery usage and to cont

Micropower Operational Amplifiers

FEATURES Rail-to-Rail Input and Output Swing Low Power: 60
A/Amplifier Gain Bandwidth Product: 450 kHz Single-Supply Operation: 3 V to 12 V Low Offset Voltage: 300
V max High Open-Loop Gain: 500 V/mV Unity-Gain Stable No Phase Reversal APPLICATIONS Battery Monitoring Sensor Conditione

Micropower RRIO Operational Amplifiers

文件：2.37357 Mbytes Page：19 Pages

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：散装 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

Infrared LED

Plastic Infrared Emitting Diode

文件：290.2 Kbytes Page：8 Pages

封装/外壳：T 1 3/4 包装：散装 描述：EMITTER IR 890NM 150MA T 1 3/4 光电器件 LED 发射器 - 红外，紫外，可见光

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

文件：287.5 Kbytes Page：16 Pages

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

文件：287.5 Kbytes Page：16 Pages

Micropower, Rail-to-Rail Input and Output Operational Amplifiers

文件：287.5 Kbytes Page：16 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040 Applicable Specifications 1) Other ASTM-B33 CID AA59551S18S1T

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040

Commercial 12mm Diameter Composition Variable Resistors

文件：420.34 Kbytes Page：2 Pages

USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS

文件：442.29 Kbytes Page：24 Pages

N-Channel 100-V (D-S) MOSFET

文件：969.33 Kbytes Page：7 Pages