Plastic Infrared Emitting Diode

Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors, except for OP298 (AA, AB, AC, AD),

Customer Specification

Construction Diameters (In) 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040 Applicable Specifications 1) Other ASTM-B33 CID AA59551S18S1T

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 18 (SOLID) AWG Tinned Copper 0.040

Commercial 12mm Diameter Composition Variable Resistors

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USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS

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N-Channel 100-V (D-S) MOSFET

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