Ultraprecision Operational Amplifier

GENERAL DESCRIPTION The OP177 features one of the highest precision performance of any op amp currently available. Offset voltage of the OP177 is only 25 μV maximum at room temperature. The ultralow VOS of the OP177 combines with its exceptional offset voltage drift (TCVOS) of 0.1 μV/°C maximum

Ultraprecision Operational Amplifier

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Ultraprecision Operational Amplifier

FEATURES Ultralow offset voltage TA = 25°C, 25 μV maximum Outstanding offset voltage drift 0.3 μV/°C maximum Excellent open-loop gain and gain linearity 12 V/μV typical CMRR: 130 dB minimum PSRR: 115 dB minimum Low supply current 2.0 mA maximum Fits industry-standard precision operational

Ultraprecision Operational Amplifier

FEATURES Ultralow offset voltage TA = 25°C, 25 μV maximum Outstanding offset voltage drift 0.3 μV/°C maximum Excellent open-loop gain and gain linearity 12 V/μV typical CMRR: 130 dB minimum PSRR: 115 dB minimum Low supply current 2.0 mA maximum Fits industry-standard precision operational

Ultraprecision Operational Amplifier

FEATURES Ultralow offset voltage TA = 25°C, 25 μV maximum Outstanding offset voltage drift 0.3 μV/°C maximum Excellent open-loop gain and gain linearity 12 V/μV typical CMRR: 130 dB minimum PSRR: 115 dB minimum Low supply current 2.0 mA maximum Fits industry-standard precision operational

Ultraprecision Operational Amplifier

文件：337.54 Kbytes Page：16 Pages

Ultraprecision Operational Amplifier

文件：337.54 Kbytes Page：16 Pages

Ultraprecision Operational Amplifier

文件：337.54 Kbytes Page：16 Pages

Ultraprecision Operational Amplifier

文件：337.54 Kbytes Page：16 Pages

Ultraprecision Operational Amplifier

文件：337.54 Kbytes Page：16 Pages

PNP general purpose transistor

DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation circuits. • Typical Performance at 400 MHz, 28 V: Output Power — 100 W

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

Silicon epitaxial planar type

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