1. General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in

a 2-pin TO-247-2 through-hole power plastic package offers temperature independent capacitive

turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF).

The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.

2. Features and benefits

• Zero forward and reverse recovery

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc x VF)

• High IFSM capability

• High power density

• Reduced system cost

• System miniaturization

• Reduced EMI

3. Applications

• Switch Mode Power Supply (SMPS)

• AC-DC and DC-DC converter

• Battery charging infrastructure

• Server and telecom power supply

• Uninterruptible Power Supply (UPS)

• Photovoltaic inverters