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PSC1065B1-Q中文资料

厂家型号

PSC1065B1-Q

文件大小

234.59Kbytes

页面数量

9

功能描述

650 V, 10 A SiC Schottky diode in bare die for automotive applications

数据手册

下载地址一下载地址二到原厂下载

简称

NEXPERIA安世

生产厂商

Nexperia B.V. All rights reserved

中文名称

安世半导体(中国)有限公司官网

PSC1065B1-Q数据手册规格书PDF详情

General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,

low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode

delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and

improves the robustness expressed in a high IFSM.

Features and benefits

• Zero forward and reverse recovery

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc

x VF)

• High IFSM capability

• High power density

• Reduced system costs

• System miniaturization

• Reduced EMI

• Qualified according to AEC-Q101 in SMD package with epoxy mold compound and

recommended for use in automotive applications

Applications

• Traction inverter

• DC-DC converter

• Onboard charger

更新时间:2025-10-6 9:30:00
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