位置:PSC1065B1 > PSC1065B1详情

PSC1065B1中文资料

厂家型号

PSC1065B1

文件大小

202.85Kbytes

页面数量

9

功能描述

650 V, 10 A SiC Schottky diode in bare die

数据手册

下载地址一下载地址二到原厂下载

简称

NEXPERIA安世

生产厂商

Nexperia B.V. All rights reserved

中文名称

安世半导体(中国)有限公司官网

PSC1065B1数据手册规格书PDF详情

General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance,

low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode

delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turnoff, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and

improves the robustness expressed in a high IFSM.

Features and benefits

• Zero forward and reverse recovery

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc

x VF)

• High IFSM capability

• High power density

• Reduced system costs

• System miniaturization

• Reduced EMI

Applications

• Switch Mode Power Supply (SMPS)

• AC-DC and DC-DC converter

• Battery charging infrastructure

• Server and telecom power supply

• Uninterruptible Power Supply (UPS)

• Photovoltaic inverters

更新时间:2025-10-6 9:30:00
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原厂授权一级代理,专业海外优势订货,价格优势、品种