General description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance,

low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated

in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers

temperature independent capacitive turn-off, zero recovery switching behavior combined with

an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the

robustness expressed in a high IFSM.

Features and benefits

• Reduced system costs

• Temperature independent fast and smooth switching performance

• Outstanding figure-of-merit (Qc

x VF)

• High IFSM capability

• High power density

• System miniaturization

• Reduced EMI

• Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

• Traction inverter

• DC-DC converter

• Onboard charger