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NGD4300GC中文资料

厂家型号

NGD4300GC

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2544.72Kbytes

页面数量

22

功能描述

4 A peak high-performance dual MOSFET gate driver

数据手册

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NGD4300GC数据手册规格书PDF详情

1. General description

The NGD4300 is a high-performance gate driver

designed to drive both high-side and low-side Nchannel

MOSFETs in a synchronous buck or a halfbridge

configuration. The floating high-side driver

can work with rail voltages up to 120 V and uses a

bootstrap supply with an integrated diode. Both lowside

and high-side output drivers have an independent

undervoltage lockout (UVLO) circuit which disables

the output driver when the driver supply is below its

threshold level. The NGD4300 accepts input control

signals complying with both TTL and CMOS signaling

as low as 2.5 V (±10%). The low voltage, provided by

an internal voltage regulator, is used to supply circuitry

in signal paths controlling the low-side and high-side

power switches. This enables a low-power operation

and a better controlled driver performance irrespective

of the IC supply voltage.

Excellent delay matching of 1 ns typical is achieved for

the low-side and high-side signal paths. The 4 A peak

source and sink current capability of the driver’s output

stage guarantees short rise- and fall-times even at high

loads.

The NGD4300 is offered in the SO8, HWSON8 and

HSO8 packages, and operates over an extended

−40 °C to +125 °C temperature range.

2. Features and benefits

• Input signals complying with both TTL and CMOS

signaling of 2.5 V, 3.3 V, and 5 V

• Output signals with excellent propagation delay

matching of 1 ns typical

• Fast propagation times of 13 ns typical

• Switching frequency up to 1 MHz

• 4 A peak source and 5 A sink current capability of

the gate driver output stage

• 4 ns rise and 3.5 ns fall times with 1000 pF loads

• Bootstrap supply voltage up to 120 V using an

integrated bootstrap diode

• 8 V to 17 V VDD operation range

• Undervoltage protection for both low-side and highside

supplies

• Low-power consumption (IDDO = 0.6 mA typical)

• 8 pin SO8, HWSON8 and HSO8 packages

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 2

exceeds 2000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3

exceeds 1000 V

• Specified from -40 °C to +125 °C

3. Applications

• Current-fed, push-pull converters

• Two-switch forward power converters

• Class-D audio amplifiers

• Solid-state motor drives

更新时间:2025-12-15 11:09:00
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